The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Nov. 30, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of circuit yield analysis for evaluating rare failure events existing in multiple disjoint failure regions defined by a multi-dimensional parametric space, the method including performing initial sampling to detect failed samples respectively located at multiple failure regions in the multi-dimensional parametric space, performing clustering to identify the failure regions, performing feature filtering to determine which parameter component is a non-principal component in affecting circuit yield, applying a dimensional reduction method on a dimension corresponding to the parameter component, optimizing an importance sampling (IS) distribution function corresponding to each of the failure regions, and constructing a final importance sampling (IS) distribution function using a mixed Gaussian (mGaussian) function corresponding to all of the failure regions.