The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Sep. 06, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.