The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Apr. 30, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Abdellatif Bellaouar, Richardson, TX (US);
Mehmet Ipek, Richardson, TX (US);
Frank Zhang, Richardson, TX (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01); H04B 1/16 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45269 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H04B 1/16 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2203/45116 (2013.01); H03F 2203/45526 (2013.01);
Abstract
We disclose a receiver circuit which may be used in mm-wave devices. The receiver circuit comprises a transimpedance amplifier comprising PMOS and NMOS transistors, wherein the back gate voltages provided to the transistors may be adjusted. By adjusting the back gate voltages during device operation, structural variations and temperature variations in the threshold voltages of the transistors may be minimized and the gain compression tolerance of the receiver circuit may be increased.