The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Nov. 02, 2017
Applicant:

Intersil Americas Llc, Milpitas, CA (US);

Inventors:

Alexandro Leoncini, Raleigh, NC (US);

Edward Kohler, Boston, MA (US);

Timmy Lok, Palm Bay, FL (US);

Assignee:

Intersil Americas LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/12 (2006.01); H02M 3/158 (2006.01); H03K 19/0185 (2006.01); H03K 5/04 (2006.01); H03K 5/24 (2006.01); G11C 5/14 (2006.01); H02M 1/38 (2007.01); H02M 1/44 (2007.01); H03K 17/16 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); G11C 5/147 (2013.01); H02M 1/38 (2013.01); H02M 1/44 (2013.01); H03K 5/04 (2013.01); H03K 5/24 (2013.01); H03K 17/163 (2013.01); H03K 19/018507 (2013.01); H02M 2001/0009 (2013.01);
Abstract

One embodiment pertains to a method including transitioning a logic state of at least one enable signal. A first power transistor begins to turn off. A parameter level of the input of the first power transistor is directly sensed. A second power transistor is turned off when the parameter level is less than a threshold level.


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