The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jun. 26, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Myung Cheol Yoo, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/504 (2013.01); H01L 24/49 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/502 (2013.01); H01L 33/507 (2013.01); H01L 33/62 (2013.01); H01L 24/48 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/4918 (2013.01); H01L 2224/49107 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01);
Abstract

A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.


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