The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jan. 22, 2018
Applicant:

Rayvio Corporation, Hayward, CA (US);

Inventors:

Yitao Liao, Redwood City, CA (US);

Douglas A. Collins, Hayward, CA (US);

Wei Zhang, Hayward, CA (US);

Assignee:

RayVio Corporation, Hayward, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 21/0254 (2013.01); H01L 21/02551 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01);
Abstract

In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.


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