The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Jul. 11, 2016
Applicant:
Stanley Electric Co., Ltd., Tokyo, JP;
Inventor:
Toshiyuki Obata, Yamaguchi, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01);
Abstract
A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.