The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Aug. 06, 2018
Epileds Technologies, Inc., Tainan, TW;
Kung-Hsieh Hsu, Tainan, TW;
Ming-Sen Hsu, Tainan, TW;
Epileds Technologies, Inc., Tainan, TW;
Abstract
An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.