The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Sep. 02, 2016
Genesis Photonics Inc., Tainan, TW;
Tsung-Syun Huang, Tainan, TW;
Jing-En Huang, Tainan, TW;
Yu-Chen Kuo, Tainan, TW;
Yan-Ting Lan, Tainan, TW;
Kai-Shun Kang, Tainan, TW;
Fei-Lung Lu, Tainan, TW;
Teng-Hsien Lai, Tainan, TW;
Yi-Ru Huang, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.