The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Sep. 02, 2016
Applicant:
Epileds Technologies, Inc., Tainan, TW;
Inventors:
Kung-Hsieh Hsu, Tainan, TW;
Ming-Sen Hsu, Tainan, TW;
Assignee:
Epileds Technologies, Inc., Tainan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 33/025 (2013.01); C30B 29/406 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01);
Abstract
A growth method of aluminum gallium nitride is disclosed. The method includes the steps of: providing a substrate; forming a first aluminum gallium nitride layer on the substrate at a first temperature; and forming a second aluminum gallium nitride layer, on the first aluminum gallium nitride layer, at a second temperature. The first temperature is higher than the second temperature.