The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Jan. 24, 2017
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Suguru Arikata, Itami, JP;
Takuma Fuyuki, Itami, JP;
Susumu Yoshimoto, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Abstract
A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer.