The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Jun. 24, 2013
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;
Inventors:
Qingchao Meng, Beijing, CN;
Qiangqiang Luo, Beijing, CN;
Assignees:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, Anhui, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/24 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 27/124 (2013.01); H01L 29/167 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/458 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6675 (2013.01); H01L 29/66666 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/7866 (2013.01); H01L 29/7869 (2013.01); H01L 29/78669 (2013.01);
Abstract
A thin film transistor, an array substrate, a manufacturing method and a display device are provided. The thin film transistor includes a substrate and a gate layer, a source layer and a drain layer disposed on the substrate. The source layer and the drain layer are disposed in different layers and the drain layer and the gate layer are disposed in same and one layer.