The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Apr. 15, 2016
Applicant:
Cornell University, Ithaca, NY (US);
Inventors:
Assignee:
Cornell University, Ithaca, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02568 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01);
Abstract
Metal-chalcogenide films disposed on a substrate comprising at least one monolayer (e.g., 1 to 10 monolayers) of a metal-chalcogenide. The films can be continuous (e.g., structurally and/or electrically continuous) over 80% or greater of the substrate that is covered by the film. The films can be made by methods based on low metal precursor concentration relative to the concentration of chalcogenide precursor. The methods can be carried out at low water concentration. The films can be used in devices (e.g., electrical devices and electronic devices).