The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
May. 17, 2018
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Josephine Chang, Ellicott City, MD (US);
Ken Alfred Nagamatsu, Ellicott City, MD (US);
Robert Samuel Howell, Silver Spring, MD (US);
Shalini Gupta, Baltimore, MD (US);
NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US);
Abstract
A transistor device comprises a base structure and a superlattice of conducting channels overlying the base structure. The superlattice of conducting channels includes source and drain access regions spaced-apart from each other, a ledge between and spaced-apart from the source and drain access regions, and source-side alternating multichannel ridges and trenches that extend from the source access region to the ledge, each ridge having a topside and opposing sidewalls that each extend from the ledge to the source access region. The transistor device includes gate metal that covers each ridge continuously from the ledge to the source access region, such that the gate metal completely covers the topside of the ridge and edges of the conducting channels that intersect the sidewalls of the ridge.