The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Oct. 02, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Cheol Yun Jeong, Yongin-si, KR;

Hee June Kwak, Yongin-si, KR;

Ju Ae Youn, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 49/02 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); G02F 1/136213 (2013.01); H01L 27/3258 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); H01L 28/88 (2013.01); H01L 28/90 (2013.01); H01L 29/78696 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 51/5212 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device includes a substrate, a semiconductor layer on the substrate, a gate insulating layer on the semiconductor layer and having one or more first openings, a gate electrode on the gate insulating layer, a first capacitor electrode on the gate insulating layer, a first interlayer insulating layer on the first capacitor electrode and having one or more second openings, a second capacitor electrode on the first interlayer insulating layer, a source electrode and a drain electrode connected with the semiconductor layer, and a light emitting diode connected with the drain electrode. The first capacitor electrode includes one or more protrusions in the first openings of the gate insulating layer and correspond to a shape of the first openings, and the second capacitor electrode includes one or more protrusions in the second openings of the first interlayer insulating layer and correspond to a shape of the second openings.


Find Patent Forward Citations

Loading…