The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Mar. 31, 2016
Applicant:

National University Corporation Shizuoka University, Shizuoka-shi, Shizuoka, JP;

Inventor:

Shoji Kawahito, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); G01S 7/481 (2006.01); H04N 5/361 (2011.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14638 (2013.01); G01S 7/481 (2013.01); H01L 27/144 (2013.01); H01L 27/146 (2013.01); H01L 27/14605 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 31/10 (2013.01); H04N 5/361 (2013.01); H04N 5/369 (2013.01); H04N 5/374 (2013.01); H04N 5/3745 (2013.01);
Abstract

A range sensor includes: an n-type surface-buried region selectively buried in an upper portion of a pixel layer to implement a photodiode and extending from a light-receiving area toward plural portions shielded by a shielding plate along the upper portion of the pixel layer so as to provide a plurality of branches; n-type charge-accumulation regions having a higher impurity concentration than the surface-buried region; a plurality of transfer gate electrodes provided adjacent to the charge-accumulation regions; and an n-type guide region having a higher impurity concentration than the surface-buried region and a lower impurity concentration than the charge-accumulation regions, and provided with one end below an aperture of the shielding plate and other ends extending to a part of the respective transfer gate electrodes.


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