The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Jan. 16, 2014
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Sergey Velichko, Boise, ID (US);
Gennadiy Agranov, San Jose, CA (US);
Victor Lenchenkov, Sunnyvale, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.