The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Nov. 17, 2017
Yeong Dae Lim, Suwon-si, KR;
Seung Jae Jung, Suwon-si, KR;
Jin Young Bang, Hwaseong-si, KR;
IL Woo Kim, Gyeonggi-do, KR;
Ho Gil Jung, Hwaseong-si, KR;
Yeong Dae Lim, Suwon-si, KR;
Seung Jae Jung, Suwon-si, KR;
Jin Young Bang, Hwaseong-si, KR;
Il Woo Kim, Gyeonggi-do, KR;
Ho Gil Jung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.