The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Nov. 13, 2018
Renesas Electronics Corporation, Tokyo, JP;
Tatsuyoshi Mihara, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To improve reliability of a semiconductor device, a control transistor and a memory transistor formed in a memory cell region are configured to have a double-gate structure, and a transistor formed in a peripheral circuit region is configured to have a triple-gate structure. For example, in the memory transistor, a gate insulating film formed by an ONO film is provided between a memory gate electrode and sidewalls of a fin, and an insulating film (a stacked film of a multilayer film of an insulating film/an oxide film and the ONO film) thicker than the ONO film is provided between the memory gate electrode and a top surface of the fin. This configuration can reduce concentration of an electric field onto a tip of the fin, so that deterioration of reliability of the ONO film can be prevented.