The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Sep. 22, 2017
Applicant:

AU Optronics Corporation, Hsin-Chu, TW;

Inventors:

Tsung-Tien Wu, Hsin-Chu, TW;

Chin-Yuan Ho, Hsin-Chu, TW;

Tsung-Yi Lin, Hsin-Chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 33/38 (2010.01); H01L 27/12 (2006.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 33/385 (2013.01); H01L 27/1214 (2013.01); H01L 33/0079 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting diode includes a semiconductor structure, a first electrode, a second electrode, and an extending electrode. The semiconductor structure has at least one sidewall and includes a light emitting layer, a first semiconductor layer, and a second semiconductor layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer of the semiconductor structure. The first semiconductor layer is disposed between the light emitting layer and the first electrode. The second electrode is electrically connected to the second semiconductor layer of the semiconductor structure. The second semiconductor layer is disposed between the light emitting layer and the second electrode. The extending electrode is disposed on the sidewall of the semiconductor structure and is electrically connected to the second electrode.


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