The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Feb. 15, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Masakuni Ikagawa, Ebina, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); C09D 183/04 (2006.01); C09D 7/61 (2018.01); C09D 7/40 (2018.01); C09D 183/16 (2006.01); C08K 3/36 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); C09D 7/61 (2018.01); C09D 7/67 (2018.01); C09D 183/04 (2013.01); C09D 183/16 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/02318 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01); H01L 23/53257 (2013.01); C08K 3/36 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes an insulating film. The insulating film includes a first insulating particle, and a second insulating particle. A particle size of at least one of the first insulating particle or the second insulating particle exceeds 0 nm and being not more than 30 nm. An average size of a void between the first insulating particle and the second insulating particle exceeds 0 nm and being not more than 10 nm.