The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jun. 21, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Tin Tin Wee, San Diego, CA (US);

Trilochan Sahoo, Bangalore, IN;

Sunil Sukumarapillai, Bangalore, IN;

Arun Kumar Kodigenahalli Venkateswar, Bangalore, IN;

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 29/41725 (2013.01); H01L 29/785 (2013.01);
Abstract

In certain aspects of the disclosure, a die includes one or more fins, a gate formed over a first portion of the one or more fins, and a first source/drain contact formed over a second portion of the one or more fins, wherein the first source/drain contact includes an extended portion that does not overlap the one or more fins. The die also includes first and second metal lines formed from a first metal layer, wherein the first and second metal lines are spaced apart. The die further includes a first via connecting the first source/drain contact to the first metal line, and a second via connecting the first source/drain contact to the second metal line, wherein the second via lies within the extended portion of the first source/drain contact.


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