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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10325802 B1

PDFFull Text
Date of Patent:
Jun. 18, 2019

Filed:

Sep. 22, 2017

Method for fabricating semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ho In Lee, Suwon-si, KR;

Dong Oh Kim, Daegu, KR;

Seok Han Park, Hwaseong-si, KR;

Chan Sic Yoon, Anyang-si, KR;

Ki Wook Jung, Seoul, KR;

Jinwoo Augustin Hong, Seoul, KR;

Je Min Park, Suwon-si, KR;

Ki Seok Lee, Hwaseong-si, KR;

Ju Yeon Jang, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Laura M Menz

Assistant Examiner:

Candice Chan

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/43 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); H01L 21/76834 (2013.01); H01L 21/823462 (2013.01); H01L 21/823468 (2013.01); H01L 27/10823 (2013.01); H01L 27/1248 (2013.01); H01L 29/0649 (2013.01); H01L 29/432 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/7869 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a device isolation film on a substrate between first and second regions, forming first and second sealing films, such that an etch selectivity of the second sealing film is smaller than that of the first sealing film, patterning the first and second sealing films to expose the second region and a portion of the device isolation film, such that an undercut is defined under a lower surface of the second sealing film, forming a filling film filling the undercut, a thickness of the filling film being thicker on a side surface of the second sealing film than on an upper surface thereof, removing a portion of the filling film to form a filling spacer in the undercut, forming a high-k dielectric film and a metal film on the filling spacer, and patterning the high-k dielectric film and the metal film.

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