The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Sep. 13, 2017
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Shin-ichi Ogino, Ibaraki, JP;

Yuichiro Nakamura, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); G11B 5/851 (2006.01); C22C 38/00 (2006.01); C22C 33/02 (2006.01); C22C 32/00 (2006.01); C22C 19/07 (2006.01); C22C 1/10 (2006.01); B22F 3/15 (2006.01); C04B 35/645 (2006.01); C22C 27/04 (2006.01); C22F 1/10 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); B22F 3/15 (2013.01); C04B 35/6455 (2013.01); C22C 1/10 (2013.01); C22C 19/07 (2013.01); C22C 32/0021 (2013.01); C22C 32/0026 (2013.01); C22C 33/0278 (2013.01); C22C 38/002 (2013.01); C23C 14/3414 (2013.01); G11B 5/851 (2013.01); C22C 27/04 (2013.01); C22C 2202/02 (2013.01); C22F 1/10 (2013.01);
Abstract

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.


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