The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Nov. 02, 2018
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Sih-Han Li, New Taipei, TW;

Chih-Sheng Lin, Tainan, TW;

Kuan-Wei Chen, Taichung, TW;

Erh-Hao Chen, Changhua County, TW;

Shyh-Shyuan Sheu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
G01N 27/127 (2013.01); G01N 27/121 (2013.01);
Abstract

A method of manufacturing a sensor device is provided. In the method, sensing electrodes are formed on a substrate, a sensing material layer is formed on the sensing electrodes. The sensing material layer is etched to form a first nanowire sensing region, a second nanowire sensing region and a third nanowire sensing region respectively between every two sensing electrodes of the sensing electrodes. A dielectric layer is formed to cover the first nanowire sensing region, the second nanowire sensing region and the third nanowire sensing region, and the first nanowire sensing region and the third nanowire sensing region are exposed.


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