The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Sep. 15, 2017
Applicant:

Transtech Systems, Inc., Latham, NY (US);

Inventors:

Sarah E. Pluta, Scotia, NY (US);

Donald D. Colosimo, Saratoga Springs, NY (US);

John W. Hewitt, Niskayuna, NY (US);

Assignee:

TRANSTECH SYSTEMS, INC., Latham, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/02 (2006.01); G01V 3/08 (2006.01); A61B 5/04 (2006.01); G01N 27/02 (2006.01); A61B 5/053 (2006.01); G01R 33/32 (2006.01); A61B 5/0478 (2006.01); G01N 22/04 (2006.01); G01N 22/02 (2006.01);
U.S. Cl.
CPC ...
G01N 27/026 (2013.01); A61B 5/0478 (2013.01); A61B 5/0536 (2013.01); G01R 27/02 (2013.01); G01R 33/323 (2013.01); G01V 3/08 (2013.01); G01N 22/02 (2013.01); G01N 22/04 (2013.01);
Abstract

A method of extracting complex impedance from selected volumes of the material under test (MUT) combined with various embodiments of electrode sensor arrays. Configurations of linear and planar electrode arrays provide measured data of complex impedance of selected volumes, or voxels, of the MUT, which then can be used to extract the impedance of selected sub-volumes or sub-voxels of the MUT through application of circuit theory. The complex impedance characteristics of the sub-voxels may be used to identify variations in the properties of the various sub-voxels of the MUT, or be correlated to physical properties of the MUT using electromagnetic impedance tomography and/or spectroscopy.


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