The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jun. 01, 2015
Applicant:

Shin-etsu Quartz Products Co., Ltd., Tokyo, JP;

Inventor:

Yuji Baba, Takefu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C03C 19/00 (2006.01); C03B 20/00 (2006.01); C30B 29/06 (2006.01); C03B 19/09 (2006.01); C03B 32/02 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C03B 19/095 (2013.01); C03B 20/00 (2013.01); C03B 32/02 (2013.01); C03C 19/00 (2013.01); C30B 29/06 (2013.01); Y02P 40/57 (2015.11);
Abstract

The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.


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