The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jul. 03, 2015
Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

Eunsu Jang, Daejeon, KR;

Yoo Seok Kim, Daejeon, KR;

Jeong Kyu Kim, Daejeon, KR;

JinHyoung Yoo, Daejeon, KR;

JungWoo Lee, Daejeon, KR;

Assignee:

LG CHEM, LTD., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01J 12/00 (2006.01); C01B 33/03 (2006.01); C01B 33/035 (2006.01);
U.S. Cl.
CPC ...
C01B 33/03 (2013.01); B01J 12/005 (2013.01); B01J 12/007 (2013.01); C01B 33/035 (2013.01);
Abstract

According to the present invention, there is provided a polysilicon production apparatus including: a horizontal reaction tube having an inlet port through which gaseous raw materials including reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The horizontal reaction tube includes reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases. The first reaction regions are connected in series with the second reaction regions. Also provided is a polysilicon production method using the polysilicon production apparatus.


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