The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2019

Filed:

Jan. 03, 2018
Applicant:

Olympus Corporation, Tokyo, JP;

Inventors:

Hiroyuki Motohara, Hachioji, JP;

Yasuhiro Kusano, Yabuki-machi, JP;

Assignee:

OLYMPUS CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/225 (2006.01); A61B 1/00 (2006.01); A61B 1/04 (2006.01); G02B 23/26 (2006.01); H01L 27/14 (2006.01); A61B 1/06 (2006.01); A61B 1/05 (2006.01); A61B 1/005 (2006.01); G02B 23/24 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
A61B 1/00096 (2013.01); A61B 1/0011 (2013.01); A61B 1/04 (2013.01); A61B 1/051 (2013.01); A61B 1/06 (2013.01); G02B 23/26 (2013.01); H01L 27/14 (2013.01); H04N 5/2251 (2013.01); H04N 5/2253 (2013.01); A61B 1/005 (2013.01); A61B 1/00006 (2013.01); A61B 1/00009 (2013.01); A61B 1/00045 (2013.01); A61B 1/00105 (2013.01); G02B 23/24 (2013.01); H01L 27/14618 (2013.01); H04N 2005/2255 (2013.01);
Abstract

An imaging unit includes: an optical system; a semiconductor package including an image sensor, and a connection electrode formed on a back surface; a cable; an electronic component; and a multi-layer substrate having a rectangular plate shape and including: a first electrode and a second electrode arranged side-by-side with each other on a front surface, the semiconductor package being mounted on the first electrode, and the cable being connected to the second electrode; and a third electrode on a back surface, the electronic component being mounted on the third electrode. The multi-layer substrate includes walls on at least two opposing sides of the back surface, and the semiconductor package is disposed such that a light receiving surface of the image sensor is arranged horizontally with respect to the multi-layer substrate.


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