The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jan. 17, 2018
Applicant:

Olympus Corporation, Hachioji-shi, Tokyo, JP;

Inventors:

Nobuyuki Watanabe, Yokohama, JP;

Toru Kondo, Tokyo, JP;

Kosei Tamiya, Tokyo, JP;

Assignee:

OLYMPUS CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/3745 (2011.01); H04N 5/378 (2011.01); H01L 27/146 (2006.01); H04N 5/345 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3745 (2013.01); H01L 27/146 (2013.01); H04N 5/3454 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01);
Abstract

A solid-state imaging device includes n first photoelectric conversion elements configured to photoelectrically convert incident light, n first reading circuits configured to output corresponding first pixel signals, m second photoelectric conversion elements configured to photoelectrically convert incident light, m second reading circuits configured to sequentially output corresponding second pixel signals, and a reading control circuit, wherein each of the second reading circuits includes a detection circuit configured to output an event signal when a change in a second charge signal is detected and a pixel signal generation circuit configured to add address information to an event signal, and the reading control circuit causes the first pixel signal to be output by determining a reading region corresponding to address information, and n and m are natural numbers greater than or equal to 2.


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