The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Nov. 16, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Thi Than Yen Mai, Ha Noi, VN;
Nicolas Chaintreuil, Montmelian, FR;
Jean-Baptiste Desmouliere, Saint-Jean-d' Arvey, FR;
Abstract
The method includes connecting a MOSFET-type transistor to the photovoltaic installation; applying, to the transistor, a signal of a control voltage (Vgs) that crosses a linear regime range (φ) of the transistor, between two critical voltages including a saturation voltage (Vgs(sat)) and a threshold voltage (Vgs(th)), and measuring the current and the voltage of the photovoltaic installation while the linear regime range of the transistor is being crossed. The control voltage signal (Vgs) of the transistor is generated from a digital control signal. The transistor initially being in short-circuit (φ) or open-circuit (φ) regime, a command is issued for a first, rapid variation (BT) in the control voltage (Vgs) in the direction of the linear regime range of the transistor, then a second, slow variation (BT) in the control voltage (Vgs) crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.