The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jun. 29, 2016
Applicants:

Institut Mines-telecom, Paris, FR;

University of New Mexico, Albuquerque, NM (US);

Inventors:

Marek Osinski, Albuquerque, NM (US);

Frédéric Grillot, Versailles, FR;

Assignee:

STC.UNM, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2006.01); H01S 5/06 (2006.01); H01S 5/14 (2006.01); H01S 5/022 (2006.01); H01S 5/068 (2006.01); H01S 5/125 (2006.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1028 (2013.01); H01S 5/0228 (2013.01); H01S 5/068 (2013.01); H01S 5/0612 (2013.01); H01S 5/101 (2013.01); H01S 5/1032 (2013.01); H01S 5/125 (2013.01); H01S 5/142 (2013.01); H01S 5/3434 (2013.01); H01S 5/34313 (2013.01); H01S 5/021 (2013.01); H01S 5/0215 (2013.01); H01S 5/0224 (2013.01); H01S 5/02248 (2013.01);
Abstract

The invention concerns a wavelength tunable semiconductor laser comprising a laser gain section () optically coupled to an underlying optical waveguide (). According to an embodiment of the invention, a first and a second passive microring resonators () having a whistle geometry, are arranged on both sides of the laser gain section and evanescently coupled with the optical waveguide (). Highly reflective broadband mirrors () are provided at the free ends of optical waveguide branches () tangentially connected to the microring resonators. The first and second passive microrings resonators provide an optical feedback to the laser gain section and allow to select the desired wavelength. The laser structure can be implemented according to a III-V/Si technology.


Find Patent Forward Citations

Osinski, Marek. (2019). Light-emitting device having iii-v semiconductor gain section coupled to whistle-geometry tunable filter (U.S. Patent No. 10320149). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10320149

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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