The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Apr. 19, 2016
Seoul Viosys Co., Ltd., Ansan-si, KR;
Jong Hyeon Chae, Ansan-si, KR;
Jong Min Jang, Ansan-si, KR;
Won Young Roh, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Dae Sung Cho, Ansan-si, KR;
Joon Sup Lee, Ansan-si, KR;
Kyu Ho Lee, Ansan-si, KR;
Chi Hyun In, Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.