The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jul. 05, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Talia S. Gershon, White Plains, NY (US);

Supratik Guha, Chicago, IL (US);

Oki Gunawan, Westwood, NJ (US);

Richard A. Haight, Mahopac, NY (US);

Yun Seog Lee, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H01L 31/032 (2006.01); H01L 21/02 (2006.01); H01L 31/0392 (2006.01); H01L 31/07 (2012.01);
U.S. Cl.
CPC ...
H01L 31/072 (2013.01); H01L 21/0256 (2013.01); H01L 21/0262 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/02579 (2013.01); H01L 31/0326 (2013.01); H01L 31/0327 (2013.01); H01L 31/0392 (2013.01); H01L 31/07 (2013.01); Y02E 10/50 (2013.01);
Abstract

Photovoltaic devices based on an AgZnSn(S,Se)(AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.


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