The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Jun. 25, 2018
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Hideaki Tsuchiko, San Jose, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A transistor includes a semiconductor body; a first gate electrode formed on a first portion of the semiconductor body and a second gate electrode formed on a second portion of the semiconductor body. A drain region is formed on a first side of the first gate electrode and a first source region is formed on a second side of the first gate electrode. The drain region is formed on a first side of the second gate electrode and a second source region is formed on a second side of the second gate electrode. A trench is formed in the semiconductor body and positioned in the drain region. A doped sidewall region is formed in the semiconductor body along the sidewall of the trench outside of the trench. The doped sidewall region is in electrical contact with the drain region and forms a vertical drain current path for the transistor.