The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Oct. 07, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sanghoon Lee, White Plains, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Effendi Leobandung, Stormville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02422 (2013.01); H01L 21/02538 (2013.01); H01L 21/02587 (2013.01); H01L 29/1054 (2013.01); H01L 29/785 (2013.01);
Abstract

A method comprises providing a structure defined by a silicon material on a buried oxide layer of a substrate; causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material; adjusting a growth condition to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and processing the silicon material and the III-V material to form a fin.


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