The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Oct. 04, 2017
Applicant:
The Penn State Research Foundation, University Park, PA (US);
Inventors:
Humberto Terrones, State College, PA (US);
Mauricio Terrones, State College, PA (US);
Ana Laura Elias, State College, PA (US);
Nestor Perea-Lopez, State College, PA (US);
Assignee:
The Penn State Research Foundation, University Park, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/417 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/02485 (2013.01); H01L 21/02499 (2013.01); H01L 21/02507 (2013.01); H01L 21/02568 (2013.01); H01L 21/28556 (2013.01); H01L 21/768 (2013.01); H01L 29/24 (2013.01); H01L 29/417 (2013.01);
Abstract
A TMD system in which the first layered material is made of heterobilayers or multilayers with semiconducting direct band gaps is provided. The first layered material may be made of multiple layers of different TMD with different stackings, exhibiting smaller direct and indirect band gaps smaller than monolayer systems of TMD.