The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Apr. 13, 2018
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Takashi Yokoyama, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 43/02 (2006.01); H01L 45/00 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 21/823431 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 27/12 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/145 (2013.01);
Abstract
A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.