The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Apr. 26, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Feng Jiang, Beijing, CN;

Li Zhou, Beijing, CN;

Long Wang, Beijing, CN;

Xingdong Liu, Beijing, CN;

Chungchun Lee, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/15 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); H01L 33/0066 (2013.01); H01L 33/32 (2013.01);
Abstract

The present disclosure provides a display substrate, its manufacturing method, and a display device. The method includes a step of forming a plurality of TFTs. The method further includes steps of: forming a lattice matching layer on a substrate so as to deposit AlN thereon; depositing an AlN layer on the lattice matching layer by low-temperature pulse magnetron sputtering; and forming on the AlN layer GaN LEDs each including an n-type GaN layer, a multilayered quantum well structure and a p-type GaN layer and corresponding to one of the TFTs.


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