The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Apr. 24, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Daisuke Kimura, Osaka, JP;

Hiroshi Inada, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 31/02 (2006.01); H01L 23/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1465 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 27/14636 (2013.01); H01L 27/14694 (2013.01); H01L 31/02005 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/0304 (2013.01); H01L 31/035236 (2013.01); H01L 31/035281 (2013.01); H01L 31/184 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14131 (2013.01); H01L 2224/14179 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.


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