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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10319764 B1

PDFFull Text
Date of Patent:
Jun. 11, 2019

Filed:

Jun. 03, 2016

Image sensor and electronic device

Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Taro Sugizaki, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:

Chip Law Group

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 27/14 (2006.01); G02F 1/13 (2006.01); H01L 27/146 (2006.01); H04N 5/369 (2011.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); H04N 5/238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14625 (2013.01); H01L 27/14 (2013.01); H01L 27/146 (2013.01); H01L 27/14603 (2013.01); H01L 27/14623 (2013.01); H01L 27/14634 (2013.01); H01L 27/14643 (2013.01); H04N 5/3696 (2013.01); G02F 1/133512 (2013.01); G02F 1/136209 (2013.01); H04N 5/238 (2013.01);
Abstract

The present technology relates to an image sensor and an electronic device capable of performing imaging in which mixed color is reduced. Photoelectric conversion layers including photoelectric conversion units separated in units of pixels are stacked in two or more layers, the image sensor is configured to include a state in which light incident on one pixel in a first photoelectric conversion layer closer to an optical lens is received by the photoelectric conversion unit in a second photoelectric conversion layer distant from the optical lens, the image sensor includes a light-shielding layer configured to shield light transmitted through the first photoelectric conversion layer, between the first photoelectric conversion layer and the second photoelectric conversion layer, the light-shielding layer has an opening to transmit the light from the first photoelectric conversion layer to the second photoelectric conversion layer, and the openings are made to be asymmetric with respect to the pixel in the first photoelectric conversion layer. The present technology can be applied to an image sensor with a multi-layered structure.

Find Patent Forward Citations

Sugizaki, Taro. (2019). Image sensor and electronic device (U.S. Patent No. 10319764). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10319764

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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