The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Aug. 22, 2017
Canon Kabushiki Kaisha, Tokyo, JP;
Akira Ohtani, Ebina, JP;
Tasuku Kaneda, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photoelectric conversion device includes a photoelectric conversion portion in a silicon layer having a light-receiving surface. The silicon layer includes a P-type impurity region including a base portion having an atomic boron concentration Ba that is the highest of the portions opposite the light-receiving surface with respect to a charge accumulation region and an atomic oxygen concentration Oa, and a deep portion located opposite the charge accumulation region in the depth direction with respect to the base portion and having an atomic boron concentration Bb and an atomic oxygen concentration Ob. The impurity region satisfies Ba×Oa<Bb×Ob.