The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Jun. 14, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ralf Richter, Radebeul, DE;
Jochen Willi. Poth, Moritzburg, DE;
Sven Beyer, Dresden, DE;
Stefan Duenkel, Dresden, DE;
Sandhya Chandrashekhar, San Jose, CA (US);
Zhi-Yuan Wu, Fremont, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.