The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jan. 24, 2017
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventors:

Sirui Luo, Carlisle, MA (US);

Javier Alejandro Salcedo, North Billerica, MA (US);

Assignee:

ANALOG DEVICES, INC., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0277 (2013.01); H01L 29/1095 (2013.01); H01L 29/7835 (2013.01);
Abstract

High voltage drain-extended metal-oxide-semiconductor (DEMOS) bipolar switches for electrical overstress protection are provided. In certain configurations herein, an electrical overstress switch embodiment for providing electrical overstress protection, such as electrostatic discharge/electrical overstress (ESD/EOS) protection includes both a DEMOS device and an embedded bipolar device. The switch is implemented to achieve the advantages provided by the combined conduction of DEMOS and bipolar devices. For example, the DEMOS device provides surface conduction at the gate region for relatively fast switch device turn on and low voltage overshoot, while the bipolar device provides high current conduction during stress condition and a high holding voltage characteristics to prevent latch-up in mission critical integrated circuit applications.


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