The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Aug. 18, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Fuzhou Boe Optoelectronics Technology Co., Ltd., Fujian, CN;

Inventors:

Yong Wang, Beijing, CN;

Jaeyoung Joo, Beijing, CN;

Hongyan Guo, Beijing, CN;

Yang Yu, Beijing, CN;

Cheong Yo Seop, Beijing, CN;

Zongtian Xie, Beijing, CN;

Zengyang Jiang, Beijing, CN;

Cundui Tang, Beijing, CN;

Huailiang Wu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 22/14 (2013.01); H01L 27/124 (2013.01);
Abstract

The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.


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