The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Jun. 27, 2016
Zhuzhou Crrc Times Electric Co., Ltd., Zhuzhou, Hunan, CN;
ZHUZHOU CRRC TIMES ELECTRIC CO., LTD., Zhuzhou, Hunan, CN;
Abstract
A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.