The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Feb. 12, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Min-Soo Jang, Seoul, KR;

Gong-Heum Han, Hwaseong-si, KR;

Chul-Sung Park, Seoul, KR;

Jang-Woo Ryu, Seoul, KR;

Chang-Yong Lee, Hwaseong-si, KR;

Tae-Seong Jang, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/36 (2006.01); G06F 13/42 (2006.01);
U.S. Cl.
CPC ...
G06F 13/4273 (2013.01); G06F 13/4243 (2013.01); Y02D 10/14 (2018.01); Y02D 10/151 (2018.01);
Abstract

A semiconductor memory device comprises a memory cell array and a data inversion circuit. The data inversion circuit is configured to receive a first unit data and a second unit data stored in the memory cell array through different first data lines, determine, while the first unit data is transmitted to a data input/output (I/O) buffer through a second data line, whether to the invert the second unit data based on a Hamming distance between the first unit data and the second unit data, and transmit the inverted or non-inverted second unit data to the data I/O buffer through the second data line.


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