The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Nov. 08, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Young-Jin Park, Incheon, KR;

Chan-Ik Park, Suwon-si, KR;

Won-Seok Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/10 (2016.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0622 (2013.01); G06F 3/0634 (2013.01); G06F 3/0644 (2013.01); G06F 3/0673 (2013.01); G06F 12/10 (2013.01); G06F 2212/1032 (2013.01); G06F 2212/20 (2013.01);
Abstract

A memory access control method that can prevent a cell hammer phenomenon includes setting at least a part of all the memory cells a safe memory region, and setting the remaining memory cells to a normal memory region. In the safe memory region, some cells set to an enabled state are accessible for data writing or reading, and the remaining cells set to a disabled state are inaccessible. Based on a safe address mapping algorithm, access to all memory cells in the safe memory region is controlled such that access to the enabled memory cells is allowed and access to the disabled memory cells is prevented. The enabled memory cells in the safe memory region are spaced apart from each other by at least one disabled memory cell in a horizontal and/or vertical direction.


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