The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jan. 17, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-oh Park, Hwaseong-si, KR;

Sang-chul Shin, Yongin-si, KR;

Chang-hwan Kim, Hwaseong-si, KR;

Ji-young Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/095 (2006.01); G11C 7/06 (2006.01); G11C 8/08 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/095 (2013.01); G03F 7/2041 (2013.01); G11C 7/06 (2013.01); G11C 8/08 (2013.01); H01L 21/0274 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); G03F 7/0035 (2013.01);
Abstract

A method of forming a pattern of a semiconductor device includes: forming a first mask pattern comprising first mask lines extending in a first direction in a cell region and second mask lines extending in the first direction in a first core region, the first mask pattern covering a second core region; forming, on the first mask pattern, a second mask pattern comprising third mask lines extending in a second direction in the cell region and fourth mask lines extending in the second direction in the second core region, the second mask pattern covering the first core region; and forming a third mask pattern by using the second mask pattern, the third mask pattern comprising island-type masks in the cell region, fifth mask lines extending in the first direction in the first core region, and sixth mask lines extending in the second direction in the second core region.


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