The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Jan. 20, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;
Tao Tang, Beijing, CN;
Tao Luo, Beijing, CN;
Qingde Long, Beijing, CN;
Zhiyong Zhang, Beijing, CN;
Xuejie Bai, Beijing, CN;
Wen Xiao, Beijing, CN;
Zerong Yang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chengdu, CN;
Abstract
Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.